A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures

G. Basso, F. Crupi, B. Neri, R. Giannetti, S. Lombardo

16th IEEE Instrumentation and Measurement Technology Conference - IMTC 1999, Venice (Italy). 24-26 May 1999

Keywords: Dielectric breakdown, Electric breakdown, Voltage, Fluctuations, Instruments, Stress, Low-frequency noise, Noise measurement, Microcomputers, Testing

DOI: https://doi.org/10.1109/IMTC.1999.776154

Published in: , pp: 1923-1926

Publication date: 24-May-1999.

Citation:
G. Basso, F. Crupi, B. Neri, R. Giannetti, S. Lombardo, "A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures", presented at 16th IEEE Instrumentation and Measurement Technology Conference - IMTC 1999, Venice, Italy, 24-26 May 1999, pp. 1923-1926, doi: 10.1109/IMTC.1999.776154

IIT-99-120A